Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures
2. Photonic integrated circuits fabricated using ion implantation
3. Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
4. Band‐gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation
5. High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation;physica status solidi (a);2020-04-21
2. Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy;Applied Physics A;2019-02-14
3. Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs Quantum Well Laser Structures;ECS Journal of Solid State Science and Technology;2017
4. Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells;SPIE Proceedings;2016-02-26
5. Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices;Optics Express;2015-01-16
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