Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364440
Reference9 articles.
1. Experimental study of implantation‐induced disordering in InGaAsP strained multiple‐quantum‐well heterostructures
2. Ion implantation induced compositional intermixing in the MQW system for wavelength shifted waveguides
3. Quantum well intermixing
4. The enhancement of quantum well intermixing through repeated ion implantation
5. Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy
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2. Investigation of ion implantation induced intermixing in InP based quaternary quantum wells;Journal of Physics D: Applied Physics;2011-11-08
3. Proton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition;Semiconductor Science and Technology;2006-09-05
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