Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97107
Reference7 articles.
1. Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror
2. A comparison of semiconductor devices for high-speed logic
3. Analyses of metalorganic chemical‐vapor‐deposition‐grown AlxGa1−xAs/GaAs strained superlattice structures by backscattering spectrometry and x‐ray rocking curves
4. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
5. Interdiffusion between GaAs and AlAs
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