Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2905317
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1. Diode laser sensor for process control and environmental monitoring
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2. Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography;Optical Materials Express;2019-03-13
3. In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing;Applied Physics Letters;2018-07-30
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