Using As/P exchange processes to modify InAs/InP quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
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1. Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers;Applied Physics Letters;2023-01-30
2. Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission;Journal of Crystal Growth;2021-03
3. An Accurate Method of Modeling Self-Assembled InAs/InGaAsP/InP (001) Quantum Dot With Double-Capping Procedure;IEEE Journal of Quantum Electronics;2017-12
4. Strain field determination in III–V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale;Journal of the Mechanical Behavior of Materials;2017-04-25
5. Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop”;Applied Physics Letters;2017-03-13
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