Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Excitonic lifetimes in thinInxGa1−xAs/InP quantum wells
2. Multi-quantum-well lasers emitting at 1.55μm grown by GSMBE
3. Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m
4. 1.5 µm GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRINSCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Gas-Source molecular beam epitaxy and characterization of inGaAs/lnGaAsP quantum well structures on InP;Journal of Electronic Materials;1996-07
2. Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas‐source molecular beam epitaxy;Journal of Applied Physics;1995-08-15
3. Thermal stability of InGaAs/InGaAsP quantum wells;Journal of Applied Physics;1993-04-15
4. Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures;Applied Surface Science;1993-01
5. Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures;Semiconductor Materials Analysis and Fabrication Process Control;1993
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