Ion beam modification studies of InP based multi quantum wells
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
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4. Improved carrier collection in intermixed InGaAs/GaAs quantum wells
5. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
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1. Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect;Laser & Optoelectronics Progress;2020
2. Study of N ions implantation induced quantum well intermixing in GaInP/AlGaInP quantum well structures;Journal of Alloys and Compounds;2015-11
3. Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing;Journal of Alloys and Compounds;2015-09
4. Ion-beam-treated strained AlGaN/GaN multi-quantum wells: HAADF-STEM, HRTEM, Raman and HRXRD characterizations;Radiation Effects and Defects in Solids;2012-08
5. Materials Engineering with Swift Heavy Ions;Swift Heavy Ions for Materials Engineering and Nanostructuring;2011
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