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Enhanced compositional disordering of quantum wells in GaAs/AlGaAs and InGaAs/GaAs using focused Ga+ion beams

  • Published:1994-08 Issue:5 Volume:65 Page:621-623
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Piva P. G.,Poole P. J.,Buchanan M.,Champion G.,Templeton I.,Aers G. C.,Williams R.,Wasilewski Z. R.,Koteles E. S.,Charbonneau S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures;physica status solidi (b);2015-04-11

2. Disordering of Quantum Structures for Optoelectronic Device Integration;Comprehensive Semiconductor Science and Technology;2011

3. Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots;Nanotechnology;2008-06-03

4. Ion beam modification studies of InP based multi quantum wells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04

5. Swift heavy ion irradiated InGaAs/InP multi quantum wells: Band-structure, interface and surface modifications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-02
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