Improved carrier collection in intermixed InGaAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122780
Reference11 articles.
1. Quantum well intermixing
2. Wavelength shifting in GaAs quantum well lasers by proton irradiation
3. Dynamics of photoexcited holes in n-doped InGaAs/GaAs single quantum well
4. Dynamics of photoexcited holes in n-doped InGaAs/GaAs single quantum well
5. Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells
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1. Room-Temperature Annealing of 1MeV Electron Irradiated Lattice Matched In 0.53 Ga 0.47 As/InP Multiple Quantum Wells;Chinese Physics Letters;2015-05
2. The Effect of Proton Implantation on Photoluminescence from Ensembles of InAs Quantum Dots Embedded in GaAs;Advanced Materials Research;2013-09
3. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well;Journal of Physics: Condensed Matter;2013-01-10
4. Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure;Semiconductors;2012-07
5. Fundamental and Dynamic Properties of Intermixed InGaAs-InGaAsP Quantum-Well Lasers;IEEE Journal of Quantum Electronics;2010-09
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