Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well-Reference-Cited by-同舟云学术

Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well

Published:2013-01-10 Issue:6 Volume:25 Page:065801
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Baranowski M,Kudrawiec R,Latkowska M,Syperek M,Misiewicz J,Sarmiento T,Harris J S

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/25/i=6/a=065801/pdf

Reference32 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m

3. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

4. Low threshold InGaAsN/GaAs lasers beyond 1500nm

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2. Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys;Journal of Applied Physics;2015-05-07

4. Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells;Nanoscale Research Letters;2014-02-17