The Effect of Proton Implantation on Photoluminescence from Ensembles of InAs Quantum Dots Embedded in GaAs

Abstract

The light-emission efficiency of InAs/GaAs quantum dots (QDs) affected by proton implantation and subsequent annealing is investigated. The photoluminesce (PL) intensity is determined by the carrier capture time and non-radiative center (NRC) lifetime. The intermixing-induced carrier capture enhancement and the implantation-induced NRC generation mutually compete, so there exists a critical implantation dose (). When is less than , the intermixing is the main effect and the PL intensity increases with . On the other hand, when is larger than , the implantation damage is so large that the intensity decreases with the dose. The higher the annealing temperature is, the larger becomes.