Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2081128
Reference18 articles.
1. GaN-based epitaxy on silicon: stress measurements
2. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
3. Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
4. The origin of stress reduction by low-temperature AlN interlayers
5. Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
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