GaN-based epitaxy on silicon: stress measurements-Reference-Cited by-同舟云学术

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GaN-based epitaxy on silicon: stress measurements

Published:2003-11 Issue:1 Volume:200 Page:26-35
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Krost A.,Dadgar A.,Strassburger G.,Clos R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 132 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film;Applied Physics Letters;2024-09-09

2. The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111);Micromachines;2024-04-16

3. Stress Analysis of GaN-Based Heterostructures on Silicon Substrates;Semiconductors;2024-02

4. Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates;Advanced Electronic Materials;2023-05-02

5. Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates;Journal of Applied Physics;2023-04-24

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