Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector-Reference-Cited by-同舟云学术

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Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector

Published:2019-08 Issue: Volume:98 Page:59-64
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Krishna Shibin,Aggarwal Neha,Gundimeda Abhiram,Sharma Alka,Husale Sudhir,Maurya K.K.,Gupta Govind

Funder

Department of Science and Technology

Prime Minister Doctoral Fellowship scheme

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p-n heterojunction;Zhuo;J. Mater. Chem. C,2018

2. Recent advances in ultraviolet photodetectors;Alaie;Mater. Sci. Semicond. Process.,2015

3. The development of nitride-based UV photodetectors;Walker;Opto-Electron. Rev.,2000

4. Semiconductor ultraviolet detectors;Rogalski;J. Appl. Phys.,1996

5. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE;Krishna;Phys. Chem. Chem. Phys.,2016

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