Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1336812
Reference11 articles.
1. Growth defects in GaN films on sapphire: The probable origin of threading dislocations
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
5. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
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