Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336864
Reference35 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
2. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling
3. Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction
4. Effect of heterojunction spike on the quantum efficiency of an AlGaAs/GaAs heterojunction charge coupled device
5. Photocollection efficiency and interface charges of MBE‐grown abruptp(GaAs) ‐N(Al0.33Ga0.67As) heterojunctions
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