Photocollection efficiency and interface charges of MBE‐grown abruptp(GaAs) ‐N(Al0.33Ga0.67As) heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90527
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1. Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography;Applied Physics Letters;2000-05-22
2. He ion radiation effects in high electron mobility transistors;Journal of Applied Physics;1995-09
3. Calculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors;Journal of Applied Physics;1991-03
4. Optical and electrical properties of the AlxGa1−xAs/GaAs single heterojunctions grown by low pressure MOVPE;Journal of Crystal Growth;1991-01
5. Theoretical Study of Forward-Voltage Heterojunction Space-Charge-Region Capacitance Including Interface-State Effects;Physica Status Solidi (a);1989-04-16
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