Calculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348556
Reference22 articles.
1. Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits
2. Heterostructure bipolar transistors and integrated circuits
3. Numerical study of emitter-base junction design for AlGaAs/GaAs heterojunction bipolar transistors
4. Self-consistent particle simulation for (AlGa)As/GaAs HBTs with improved base-collector structures
5. A study of base built-in field effects on the steady-state current gain of heterojunction bipolar transistors
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