Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1448872
Reference13 articles.
1. Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base
2. Effect of collector design on the d.c. characteristics of heterojunction bipolar transistors
3. 1.5-W CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistor
4. Analysis of the offset voltage of InGaP/GaAs single‐, double‐, and composite double‐heterojunction bipolar transistors
5. Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction;Semiconductors;2013-10
2. High-performance InGaP/GaAs superlattice–emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode;Thin Solid Films;2012-10
3. InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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