Analysis of the offset voltage of InGaP/GaAs single‐, double‐, and composite double‐heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359237
Reference10 articles.
1. Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application
2. Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
3. Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base
4. InGaP/GaAs based single and double heterojunction bipolar transistors grown by MOMBE
5. Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
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1. Heterostructure Electronic Devices;III–V Compound Semiconductors and Devices;2020
2. Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors;Journal of Applied Physics;2007-04-15
3. An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor;Journal of Applied Physics;2004-10-15
4. Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors;Microelectronics Reliability;2004-07
5. Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor;Journal of Applied Physics;2002-04
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