Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base-Reference-Cited by-同舟云学术

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Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base

Published:1993-01 Issue:1 Volume:14 Page:25-28
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hanson A.W.,Stockman S.A.,Stillman G.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/5617/00215089.pdf?arnumber=215089

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor;IEEE Transactions on Electron Devices;2012-12

2. Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors;Journal of Applied Physics;2011-12

3. Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors;Applied Physics Letters;2011-06-13

4. Electronic properties of GaxIn1−xP from pseudopotential calculations;Materials Chemistry and Physics;2010-11

5. Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor;Applied Physics Letters;2003-12-29

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