Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1637147
Reference18 articles.
1. Subpicosecond InP/InGaAs heterostructure bipolar transistors
2. A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors
3. High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors
4. Collector/emitter offset voltage in double-heterojunction bipolar transistors
5. NpnNdouble‐heterojunction bipolar transistor on InGaAsP/InP
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1. Optical and electrical characteristics of GaAs/InGaAs quantum-well device;Journal of Alloys and Compounds;2009-03
2. On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs);Solid-State Electronics;2009-02
3. Comparative study on temperature-dependent characteristics of InP∕InGaAs single- and double-heterojunction bipolar transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature;Journal of The Electrochemical Society;2007
5. Mobility Enhancement and Breakdown Behavior in InP-Based Heterostructure Field-effect Transistor;Journal of The Electrochemical Society;2005
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