Comparative study on temperature-dependent characteristics of InP∕InGaAs single- and double-heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Comparative study on temperature-dependent characteristics of InP∕InGaAs single- and double-heterojunction bipolar transistors

Published:2008 Issue:2 Volume:26 Page:618
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chen Wei-Hsin,Chen Tzu-Pin,Lee Chi-Jhung,Hung Ching-Wen,Chu Kuei-Yi,Chen Li-Yang,Tsai Tsung-Han,Liu Wen-Chau

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low temperature performance of pure ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar microwave transistors;International Journal of Electronics Letters;2013-09

2. Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors;Semiconductors;2012-12

3. An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage;Thin Solid Films;2012-10

4. Study of Metamorphic Co-Integrated Heterostructure Bipolar and Field-Effect Transistors (BiFETs);Journal of The Electrochemical Society;2011

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