Low temperature performance of pure ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar microwave transistors
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/21681724.2013.824699
Reference22 articles.
1. Temperature dependent DC characteristics of an InP/InGaAs/InGaAsP HBT
2. Cryogenic Operation of Third-Generation, 200-GHz Peak-<tex>$f_T$</tex>, Silicon–Germanium Heterojunction Bipolar Transistors
3. InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications
4. Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors
5. Comparative study on temperature-dependent characteristics of InP∕InGaAs single- and double-heterojunction bipolar transistors
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