An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage-Reference-Cited by-同舟云学术

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An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

Published:2012-10 Issue: Volume:521 Page:172-175
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tsai Jung-Hui,Lour Wen-Shiung,Chao Yi-Ting,Ye Sheng-Shiun,Ma Yung-Chun,Jhou Jia-Cing,Wu You-Ren,Ou-Yang Jhih-Jhong

Funder

National Science Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Characteristics of InGaP/GaAs co-integrated δ-doped heterojunction bipolar transistor and doped-channel field effect transistor

2. Comparative study on temperature-dependent characteristics of InP∕InGaAs single- and double-heterojunction bipolar transistors

3. Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs

4. An analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layer

5. Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors

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1. Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor;International Journal of Electronics Letters;2021-07-07

2. Integrated magnetic-sensitive differential circuit based on heterojunction silicon magnetic-sensitive transistor;Sensors and Actuators A: Physical;2017-09

3. Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction;Sensors;2017-01-22

4. Electrical determination of the bandgap energies of the emitter and base regions of bipolar junction transistors;Journal of Applied Physics;2016-10-28

5. Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors;Semiconductors;2014-06

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