Electrical determination of the bandgap energies of the emitter and base regions of bipolar junction transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4966609
Reference24 articles.
1. Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
2. An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage
3. Currents of the GaInP∕GaAs heterojunction bipolar transistor as a function of the temperature
4. Free electron gas primary thermometer: The bipolar junction transistor
5. The Transistor, A Semi-Conductor Triode
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