Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor-Reference-Cited by-同舟云学术

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Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor

Published:2021-07-07 Issue: Volume: Page:1-13
ISSN:2168-1724
Container-title:International Journal of Electronics Letters
language:en
Short-container-title:International Journal of Electronics Letters

Author:

Jena M. R.¹,Diwarkar A.¹,Panda A. K.²,Dash G. N.³

Affiliation:

1. Department of Electronics and Telecommunication Engineering, Veer Surendra Sai University of Technology, Burla, Sambalpur, India

2. Department of Electronics and Telecommunication Engineering, National Institute of Science and Technology, Berhampur, India

3. School of Physics, Sambalpur University, Sambalpur, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/21681724.2021.1941280

Reference11 articles.

1. Temperature dependent DC characteristics of an InP/InGaAs/InGaAsP HBT

2. Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor

3. Pt/Ti Ohmic contact top++‐InGaAsP (1.3 μm) formed by rapid thermal processing

4. Liu, W. 1999. Fundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs, Wiley-Interscience,0–471–29700–3

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