NpnNdouble‐heterojunction bipolar transistor on InGaAsP/InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96392
Reference14 articles.
1. High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation
2. (GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base
3. High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
4. Fast response InP/InGaAsP heterojunction phototransistors
5. InP/InGaAs heterojunction phototransistors
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1. Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures;Applied Physics Letters;2004-04-12
2. Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor;Applied Physics Letters;2003-12-29
3. High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base-collector heterojunction;IEEE Electron Device Letters;1995-11
4. Photoreflectance study on the two‐dimensional electron gas of InAlAs/InGaAs heterojunction bipolar transistor grown by molecular beam epitaxy;Journal of Applied Physics;1995-06-15
5. InP-based single heterojunction bipolar transistors with improved breakdown characteristics;Electronics Letters;1994-07-07
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