Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures-Reference-Cited by-同舟云学术

Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures

Published:2004-04-12 Issue:15 Volume:84 Page:2910-2912
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jin Zhi,Prost W.,Neumann S.,Tegude F. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1695638

Reference9 articles.

1. High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy

2. Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base

3. High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

4. NpnNdouble‐heterojunction bipolar transistor on InGaAsP/InP

5. Effects of a Compositionally-GradedInxGa1-xAsBase in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors

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1. Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz;Chinese Physics Letters;2009-02-23

2. Ultra high-speed InP/InGaAs DHBTs withftof 203 GHz;Journal of Semiconductors;2009-01

3. Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305GHz;Solid-State Electronics;2008-11

4. On the design of base-collector junction of InGaAs/InP DHBT;Science in China Series E: Technological Sciences;2008-09-11

5. High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz;Chinese Physics Letters;2008-07-29