High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation-Reference-Cited by-同舟云学术

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High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation

Published:1983 Issue:4 Volume:19 Page:147
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Ankri D.,Schaff W.J.,Smith P.,Eastman L.F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19830104?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Shockley, W.: (2 569 347)

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1. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy;Journal of Crystal Growth;2003-04

2. InAs-based bipolar transistors grown by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

3. Hot-Electron Transistors;Physics of High-Speed Transistors;1993

4. High-Speed Devices and Integrated Circuits;Physics of High-Speed Transistors;1993

5. A high‐gain, high‐bandwidth In0.53Ga0.47As/InP heterojunction phototransistor for optical communications;Journal of Applied Physics;1991-01-15

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