Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19931252?crawler=true&mimetype=application/pdf
Reference11 articles.
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors;Journal of Applied Physics;2007-04-15
2. GaInP∕GaAs double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector;Journal of Applied Physics;2006-07-15
3. Growth of nitride semiconductors and its application to heterojunction bipolar transistors;Electronics and Communications in Japan (Part II: Electronics);2006
4. Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded AlxGa1−xAs layer at emitter/base heterojunction;Solid-State Electronics;2004-07
5. InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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