GaInP∕GaAs double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2218027
Reference11 articles.
1. Double heterojunction bipolar transistors Using AlGaInP/GaAs/GaInP
2. Analysis of the operation of GaAlAs/GaAs HBTs
3. InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE
4. GaInP/GaAs double heterojunction bipolar transistor with high f/sub T/, f/sub max/, and breakdown voltage
5. Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor
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1. Surface potential in n- and p-GaInP2(100): temperature effect;Journal of Physics D: Applied Physics;2021-02-18
2. Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions;The Journal of Physical Chemistry C;2017-04-14
3. Comparison of wet chemical treatment and Ar-ion sputtering for GaInP2(100) surface preparation;Materials Science in Semiconductor Processing;2016-08
4. Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor;IEEE Transactions on Electron Devices;2012-12
5. Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors;Journal of Applied Physics;2007-04-15
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