InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19920775?crawler=true&mimetype=application/pdf
Reference15 articles.
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors;Journal of Applied Physics;2007-04-15
2. On the energy band structure of the GaInP/GaAs heterojunction bipolar transistor;physica status solidi (c);2007-04
3. GaInP∕GaAs double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector;Journal of Applied Physics;2006-07-15
4. Currents of the GaInP∕GaAs heterojunction bipolar transistor as a function of the temperature;Applied Physics Letters;2006-04-24
5. An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor;Journal of Applied Physics;2004-10-15
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