He ion radiation effects in high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360058
Reference20 articles.
1. Transient Radiation Effects in AlGaAs/GaAs MODFETs
2. Heavy ion total fluence effects in GaAs devices
3. High energy neutron irradiation effects in GaAs modulation-doped field effect transistors (MOSFETs): threshold voltage
4. Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons
5. Long Term Transient Radiation Response of GaAs FETs Fabricated on an AlGaAs Buffer Layer
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