Heavy ion total fluence effects in GaAs devices-Reference-Cited by-同舟云学术

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Heavy ion total fluence effects in GaAs devices

Published:1990-12 Issue:6 Volume:37 Page:2065-2070
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Anderson W.T.,Knudson A.R.,Meulenberg A.,Hung H.-L.,Roussos J.A.,Kiriakidis G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/3156/00101230.pdf?arnumber=101230

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High radiation tolerance of InAs∕AlSb high-electron-mobility transistors;Applied Physics Letters;2005-10-24

2. Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence;IEEE Transactions on Nuclear Science;2003-12

3. Historical perspective on radiation effects in III-V devices;IEEE Transactions on Nuclear Science;2003-06

4. Universal behavior in irradiated high-electron-mobility transistors;Applied Physics Letters;2002-04-15

5. GaAs Based Field Effect Transistors for Radiation-Hard Applications;Radiation Effects in Advanced Semiconductor Materials and Devices;2002

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