Universal behavior in irradiated high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1470243
Reference13 articles.
1. Radiation Effects in High Electron Mobility Transistors: Total Dose Gamma Irradiation
2. Heavy ion total fluence effects in GaAs devices
3. He ion radiation effects in high electron mobility transistors
4. Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs
5. Impact of 20-MeV /spl alpha/-ray irradiation on the V-band performance of AlGaAs pseudomorphic HEMTs
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