Impact of proton irradiation on deep level states in n-GaN-Reference-Cited by-同舟云学术

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Impact of proton irradiation on deep level states in n-GaN

Published:2013-07-22 Issue:4 Volume:103 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Z.,Arehart A. R.,Cinkilic E.,Chen J.,Zhang E. X.,Fleetwood D. M.,Schrimpf R. D.,McSkimming B.,Speck J. S.,Ringel S. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4816423

Reference32 articles.

1. dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

2. Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

3. Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

4. Proton irradiation effects on AlN/GaN high electron mobility transistors

5. Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

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5. Simulation study of displacement damage induced by protons in Al<sub>x</sub>Ga<sub>1</sub><em><sub>−</sub></em><sub>x</sub>N materials;Acta Physica Sinica;2024

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