Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions
Author:
Affiliation:
1. College of Computer, National University of Defense Technology 1 , Changsha 410073, China
2. Key Laboratory of Advanced Microprocessor Chips and Systems, National University of Defense Technology 2 , Changsha 410073, China
Abstract
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province
Publisher
AIP Publishing
Link
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0213157/20017135/262103_1_5.0213157.pdf
Reference32 articles.
1. Improving radiation reliability of sram-based physical unclonable function with self-healing and pre-irradiation masking techniques;IEEE Trans. VLSI. Syst.,2024
2. Voltage-controlled magnetic anisotropy based physical unclonable function;Appl. Phys. Lett.,2023
3. DA PUF: Dual-state analog PUF,2022
4. Reliability analysis of FinFET-based SRAM PUFs for 16 nm, 14 nm, and 7 nm technology nodes,2022
5. A PUF scheme using competing oxide rupture with bit error rate approaching zero,2018
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