Effect of heterojunction spike on the quantum efficiency of an AlGaAs/GaAs heterojunction charge coupled device
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92970
Reference9 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
2. Photocollection efficiency and interface charges of MBE‐grown abruptp(GaAs) ‐N(Al0.33Ga0.67As) heterojunctions
3. The graded‐gap Alx Ga1 − x As–GaAs heterojunction
4. Effects of Zn cross diffusion on the properties ofn(AlxGa1−xAs) ‐p(GaAs) heterojunctions
5. Rectification at n‐GaAs–n‐Ga0.7Al0.3As heterojunctions grown by liquid phase epitaxy
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1. Three-wave-mixing spectroscopy of ZnSe/GaAs(001) heterointerfaces;Physical Review B;1994-04-15
2. Comment on the compositional dependence of bandgap in AlGaAs and band-edge discontinuities in AlGaAs-GaAs heterostructures;Semiconductor Science and Technology;1992-08-01
3. Interface quantum well states observed by three-wave mixing in ZnSe/GaAs heterostructures;Physical Review Letters;1992-06-22
4. Optical transitions in symmetric, compositionally graded triangular AlGaAs quantum wells grown by molecular beam epitaxy;Journal of Applied Physics;1992-04
5. Electron emission from direct bandgap heterojunction capacitors;IEEE Transactions on Electron Devices;1989
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