Impact of pressure on the resonant energy and resonant frequency for two barriers Ga1−xAlxAs/GaAs nanostructures

Abstract

Abstract We study the effect of hydrostatic pressure on resonant frequency (ν 1) and its associated lifetime (τ 1), and energy (E1) for electrons tunneling through GaAs-AlGaAs two-barrier nanostructure (TBNS). The effective mass mismatch for well and barrier materials is considered using the effective mass theory. Pressure and the Al content, which mainly affect the barrier height and consequently the TBNS’s, are found to have a significant impact on resonant lifetime, resonant frequency, and resonant energy. The current study shows that the resonance lifetime, resonant frequency, and energy are strongly influenced by the barrier thickness and well width. When comparing the results of this study to the data from the experiment, good agreements are found. The GaAs-AlGaAs TBNS’s electronic devices are controlled mainly by the hydrostatic pressure.