Direct-bonded GaAs∕InGaAs tandem solar cell-Reference-Cited by-同舟云学术

Direct-bonded GaAs∕InGaAs tandem solar cell

Published:2006-09-04 Issue:10 Volume:89 Page:102106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tanabe Katsuaki,Fontcuberta i Morral Anna,Atwater Harry A.,Aiken Daniel J.,Wanlass Mark W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2347280

Reference17 articles.

1. J. M. Olson, D. J. Friedman, and S. R. Kurtz, in Handbook of Photovoltaic Science and Engineering, edited by A. Luque and S. Hegedus (Wiley, New York, 2003), p. 359.

2. Dislocation generation of GaAs on Si in the cooling stage

3. Growth of high-quality GaAs/Si films for use in solar cell applications

4. Silicon‐to‐silicon direct bonding method

5. Strained interface of lattice-mismatched wafer fusion

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