Strained interface of lattice-mismatched wafer fusion
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.12899/fulltext
Reference18 articles.
1. Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
2. Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates
3. Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
4. 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates
5. Double‐fused 1.52‐μm vertical‐cavity lasers
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