Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105032
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3. High performance GaAs MESFETs grown on InP substrates by MOCVD
4. First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate
5. Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate
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