Ohmic InP/Si direct-bonded heterointerfaces
Author:
Affiliation:
1. Department of Chemical Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5092436
Reference32 articles.
1. High‐speed InP optoelectronic switch
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5. Hybrid indium phosphide-on-silicon nanolaser diode
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