Nanoscale Component Diffusion Study of InP/SiC Heterogeneous Bonding Interface for High-Quality Optoelectronic Device Integration-Reference-Cited by-同舟云学术

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Nanoscale Component Diffusion Study of InP/SiC Heterogeneous Bonding Interface for High-Quality Optoelectronic Device Integration

Published:2024-09-09 Issue: Volume: Page:
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Kang Ruyan¹,Zhou Jian²³,Liu Zehan²³^ORCID,Wang Xiaoshan²³,Duan Xueyi⁴,Li Xiaoxuan²³,Zhao Jia³⁴,Zuo Zhiyuan¹²³^ORCID

Affiliation:

1. Institute of Novel Semiconductors, Shandong University, Jinan 250100, P. R. China

2. Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China

3. Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China

4. School of Information Science and Engineering, Shandong University, Qingdao 266237, P. R. China

Funder

National Key Research and Development Program of China

Shandong University

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c03464

Reference33 articles.

1. Indium Phosphide and Related Materials: Processing, Technology and Devices

2. Chen, P. C. Long wavelength GaInAsP/InP semiconductor lasers for optical communications, PhD Thesis; California Institute of Technology: 1982; pp 1–91

3. Past, present, and future of InP-based photonic integration

4. Bulk-like transverse electron mobility in an array of heavilyn-doped InP nanowires probed by terahertz spectroscopy

5. Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation

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