Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108787
Reference10 articles.
1. First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate
2. Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate
3. Extreme selectivity in the lift‐off of epitaxial GaAs films
4. Alignable epitaxial liftoff of GaAs materials with selective deposition using polyimide diaphragms
5. High‐quality eutectic‐metal‐bonded AlGaAs‐GaAs thin films on Si substrates
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