High‐quality eutectic‐metal‐bonded AlGaAs‐GaAs thin films on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106494
Reference12 articles.
1. Combined effect of strained‐layer superlattice and annealing in defects reduction in GaAs grown on Si substrates
2. Defect reduction effects in GaAs on Si substrates by thermal annealing
3. High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers
4. Ultralong minority‐carrier lifetimes in GaAs grown by low‐pressure organometallic vapor phase epitaxy
5. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
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