Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures-Reference-Cited by-同舟云学术

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Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures

Published:1996-12 Issue:4 Volume:20 Page:561-567
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Weckwerth M.V.,Simmons J.A.,Harff N.E.,Sherwin M.E.,Blount M.A.,Baca W.E.,Chui H.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium-bond-and-stop-etch (IBASE) technique for dual-side processing of thin high-mobility GaAs/AlGaAs epitaxial layers;Applied Physics Letters;2023-06-05

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3. Realization of independent contacts in barrier-separated InAs/GaSb quantum wells;Applied Physics Letters;2023-03-20

4. Demonstration of a tunable antenna-coupled intersubband terahertz (TACIT) mixer;Applied Physics Letters;2020-01-06

5. Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer;Physical Review B;2019-10-31

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