Combined effect of strained‐layer superlattice and annealing in defects reduction in GaAs grown on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101581
Reference10 articles.
1. Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates
2. Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates
3. Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
4. Effectiveness of strained‐layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates
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