High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Heteroepitaxy on Si, Vol. I;Fan,1986
2. Heteroepitaxy on Si, Vol. II;Fan,1987
3. Combined effect of strained‐layer superlattice and annealing in defects reduction in GaAs grown on Si substrates
4. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
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